18th Int'l Symposium on Quality Electronic Design

نویسندگان

  • Yiting Chen
  • Dae Hyun Kim
چکیده

Design of gate-level monolithic three-dimensional integrated circuits (3-D ICs) requires 3-D placement, 3-D clocktree synthesis, 3-D routing and monolithic inter-layer via insertion, 3-D timing and power optimization, and so on. Until now, however, various research on gate-level monolithic 3-D ICs focused on analysis of wirelength, power consumption, performance, thermal characteristics, etc. based on a design methodology using 2-D placement, uniform location scaling, zdirectional partitioning, and 2-D planar legalization. However, the design of gate-level monolithic 3-D IC layouts requires more sophisticated 3-D algorithms to generate high-quality layouts. In this paper, we propose a legalization algorithm for the design of multi-tier gate-level monolithic 3-D ICs. The algorithm performs planar and z-directional legalization in an interleaved fashion to perform native 3-D legalization. We compare the proposed algorithm with a legalization algorithm being used in the literature and show that the proposed algorithm achieves shorter wirelength with almost no density constraint violation.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

10th Int'l Symposium on Quality Electronic Design

Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, and Mansun Chan 1 The Micro& Nano Electronic Device and Integrated Technology Group, The Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen, P. R .China; 2 TSRC, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, Institute of Microelectronics, EECS, Peki...

متن کامل

13th Int'l Symposium on Quality Electronic Design

Bias temperature instability (among other problems) is a key reliability issue with nanoscale CMOS transistors. Especially in sensitive circuits such as sense amplifiers of SRAM arrays, transistor aging may significantly increase the probability of failure. By analyzing the Current Based Sense Amplifier circuit and Voltage-Latched Sense Amplifier circuit through HSPICE simulations, we observe t...

متن کامل

12th Int'l Symposium on Quality Electronic Design

This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTNinduced delay fluctuation using a circuit matrix array fabricated in a 65nm process. Measured results include frequency fluctu...

متن کامل

10th Int'l Symposium on Quality Electronic Design

In this paper challenges observed in 65nm technology for circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra low supply voltages to find the best topology for subthreshold operation. To support the theoretical discussions different topologies are analyzed and simulated. Various aspects of flip-flop circuits are described in det...

متن کامل

10th Int'l Symposium on Quality Electronic Design

Guidelines for distributing a buck converter rectifier for application to three-dimensional (3-D) circuits is described. The 3-D rectifier exploits the properties of transmission lines to generate and distribute power supplies to different planes. As compared to a conventional rectifier, the proposed rectifier circuit only requires moderately size capacitors without the use of onchip inductors....

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017